Patent · US Active

Memory device with a fuse protection circuit

US10283210B2 · kind B2 · utility

3Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 18, 2018
Grant dateMay 7, 2019
Priority date
Expiry dateSep 18, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/601
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a memory cell and a program line. The memory cell includes a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.