MTJ structures, STT MRAM structures, and methods for fabricating integrated circuits including the same
US10283246B1 · kind B1 · utility
3Cited by
2References
19Claims
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Key dates
| Filing date | Oct 20, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Oct 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Magnetic tunnel junction (MTJ) structures, spin transfer torque magnetic random access memory (STT MRAM) structures, and methods for fabricating integrated circuits including such structures are provided. In an embodiment, an MTJ structure includes a cobalt iron carbon (CoFeC) fixed reference layer. Further, the MTJ structure includes a cobalt iron carbon (CoFeC) free storage layer. Also, the MTJ structure includes a tunnel barrier layer between the fixed reference layer and the free storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.