Gas-induced perovskite formation
US10283278B2 · kind B2 · utility
0Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2016 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | May 16, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CH3NH2) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CH3NH2) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially or simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.