Methods for depositing films with organoaminodisilane precursors
US10283350B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2018 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | May 10, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.