CMP polishing liquid and polishing method
US10283373B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2015 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Jul 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential EA of cobalt and the corrosion potential EB of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference EA−EB between the corrosion potential EA and the corrosion potential EB is 0˜300 mV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.