Method for forming semiconductor device structure having conductive structure with twin boundaries
US10283450B2 · kind B2 · utility
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6References
21Claims
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Key dates
| Filing date | Aug 9, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Aug 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.