Method of manufacturing thin-film transistor, thin-film transistor substrate, and flat panel display apparatus
US10283529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2016 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Jul 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a thin-film transistor includes forming an oxide semiconductor on a substrate, stacking an insulating layer and a metal layer on the substrate to cover the oxide semiconductor, forming a photosensitive pattern on the metal layer, forming a gate electrode by etching the metal layer using the photosensitive pattern as a mask, where a part of the gate electrode overlaps a first oxide semiconductor region of the oxide semiconductor, forming a gate insulating film by partially etching the insulating layer using the photosensitive pattern as a mask, where the gate insulating film includes a first insulating region with a first thickness under the photosensitive pattern and a second insulating region with a second thickness less than the first thickness, and performing plasma processing on the gate insulating film so that a second oxide semiconductor region of the oxide semiconductor under the second insulating region becomes conductive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.