SiC structure, semiconductor device having SiC structure, and process of forming the same
US10283594B2 · kind B2 · utility
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Key dates
| Filing date | Sep 1, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Sep 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.