Semiconductor device and manufacturing method therefor
US10283612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2018 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Mar 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.