Patent · US Active

Field effect transistor device with separate source and body contacts and method of producing the device

US10283635B2 · kind B2 · utility

0Cited by

4References

16Claims

0Family size

Assignee

AMS AG · AT

Inventors

Martin Knaipp · Kufstein, AT
Georg Roehrer · Lebring, AT
Jong Mun Park · Graz, AT

Key dates

Filing date	Nov 3, 2017
Grant date	May 7, 2019
Priority date	—
Expiry date	Nov 3, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/153
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The field effect transistor device comprises a substrate (1) of semiconductor material, a body well of a first type of electric conductivity in the substrate, a source region in the body well, the source region having an opposite second type of electric conductivity, a source contact (3) on the source region, a body contact region of the first type of electric conductivity in the body well, a body contact (5) on the body contact region, and a gate electrode layer (2) partially overlapping the body well. A portion (2*) of the gate electrode layer (2) is present between the source contact (3) and the body contact (5).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.