Photodetection device and system having avalanche amplification
US10283651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Nov 22, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photodetection device includes a semiconductor substrate; and a pixel including a first semiconductor region having signal charges as majority carriers, and an electrode disposed on the semiconductor substrate with a dielectric member interposed therebetween. The pixel is configured to detect a signal based on avalanche-amplified electric charges. A quenching circuit configured to suppress a current generated by the avalanche amplification is connected to the first semiconductor region. A second semiconductor region of a conductive type opposite that of the first semiconductor region is disposed under the electrode and in a front surface of the semiconductor substrate. When a predetermined potential is supplied to the electrode, an inversion layer is formed in the second semiconductor region, and the inversion layer is electrically connected to the first semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.