Avalanche diode including vertical PN junction
US10283664B2 · kind B2 · utility
2Cited by
3References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 31, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An avalanche diode includes a PN junction with a first deep trench structure adjacent to the PN junction. An area via which photons impinge is provided, the PN junction extending substantially vertically with respect to the area. An avalanche diode array can be formed to include a number of avalanche diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.