Semiconductor memory structure with magnetic tunnel junction (MTJ) cell
US10283700B2 · kind B2 · utility
4Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Jun 20, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Jul 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A semiconductor memory structure is provided. The semiconductor memory structure includes a bottom electrode formed over a substrate and a magnetic tunneling junction (MTJ) cell formed over the bottom electrode. The semiconductor memory structure also includes a top electrode formed over the MTJ cell; and a first sidewall spacer layer formed on a top surface of the MTJ cell and an outer sidewall surface of the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.