Method forming a graphene oxide-reduced graphene oxide junction
US10283783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2015 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method including a deposition step comprising depositing a layer of graphene oxide; a deposition step including selectively exposing a region of the deposited graphene oxide layer to electromagnetic radiation to form a region of reduced graphene oxide adjacent to a neighboring region of unexposed graphene oxide, the graphene oxide and adjacent reduced graphene oxide regions forming a junction therebetween to produce a graphene oxide-reduced graphene oxide junction layer; and repeating the deposition and exposure steps for one or more further respective layers of graphene oxide, over an underlying graphene oxide-reduced graphene oxide junction layer, to produce an apparatus in which the respective junctions of the graphene oxide-reduced graphene oxide layers, when considered together, extend in the third dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.