Linearity in radio-frequency devices using body impedance control
US10284200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2018 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Jul 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A process for fabricating a semiconductor die involves providing a semiconductor substrate, forming a first field-effect transistor on the semiconductor substrate, the first field-effect transistor having a source, a drain, a gate, and a body, forming a coupling path that couples the body of the first field-effect transistor to the gate of the first field-effect transistor, the coupling path including a diode, and forming an adjustable impedance network coupled between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.