Low-noise high dynamic range image sensor
US10284798B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Oct 11, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Oct 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/772
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a plurality of pixels each including a first photodiode linked to a capacitive readout node by a first transistor, and a second photodiode linked to a first capacitive storage node by a second transistor, the first capacitive node being linked to the readout node by a third transistor, and the readout node being linked to a node for applying a reset potential by a fourth transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.