Direct and selective area synthesis of graphene using microheater elements
US10285218B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2018 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | May 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B3/267
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of synthesis of graphene can include: depositing a carbon (C) layer on a substrate, for example a substrate comprising a silicon (Si) layer and an oxide (SiO2) layer on the Si layer; depositing a metal layer on the C layer; preparing the substrate including the C layer and the metal layer in a chamber; maintaining a pressure of the chamber under 1 atm, for example under 1 Torr; flowing an inert gas in the chamber; contacting a thermal probe tip on the metal layer; heating the thermal probe tip to a temperature of more than 250° C. such that graphene is formed on the substrate; and etching the substrate. The metal layer can be a tin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.