Laser system and method for processing sapphire
US10286487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2014 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jun 20, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter “QCW laser”). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.