Integrated ion sensing apparatus and methods
US10288582B2 · kind B2 · utility
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22References
20Claims
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Key dates
| Filing date | Jan 12, 2016 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Aug 16, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/333
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.