Patent · US Active

Monitoring aging of power semiconductor devices based on case temperature

US10288672B2 · kind B2 · utility

2Cited by
0References
23Claims
0Family size

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Key dates

Filing dateApr 7, 2017
Grant dateMay 14, 2019
Priority date
Expiry dateAug 3, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/2619
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The aging of an electronic component in an electronic power converter can be monitored based on two or more case temperature measurements. A power electronic device is enclosed in a package having a baseplate, in which the power electronic device generates heat during operation and the baseplate transfers heat to a heat dissipating device or a cooling device. Sensors measure temperatures at first and second locations on a surface of the baseplate. A data processor calculates a value for a first parameter based on the temperatures at the first and second locations, in which the first parameter is indicative of an aging process of the power electronic device, and generates a first signal based on a comparison of the calculated value and a first predetermined threshold. The data processor calculates a value for a second parameter based on the first parameter value, a predetermined look-up table, and the temperatures at the first and second locations, in which the second parameter is indicative of another aging process of the semiconductor switching devices, and generates a second signal based on a comparison of the calculated value and a second predetermined threshold.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.