Method to fabricate chip-scale electronic photonic (plasmonic)-integrated circuits
US10288804B2 · kind B2 · utility
2Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Jul 6, 2016 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jul 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Electronic-photonic integrated circuits (EPICs), such a monolithically integrated circuit, are considered to be next generation technology that takes advantage of high-speed optical communication and nanoscale electronics. Atomically thin transition metal dichalcogenides (TMDs) may serve as a perfect platform to realize EPIC. The generation and detection of light by a monolayer TMD at nanoscale through surface plasmon polaritons (SPPs) may be utilized to provide optical communication. The bidirectional nature of the TMDs allow such a layer to be utilizes as part of emitters or photodetectors for EPICs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.