Organic material layer as light shield for thin film transistor channel
US10288871B1 · kind B1 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2016 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jul 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A display device includes a first support plate and a pixel region over the first support plate. A thin film transistor (TFT) structure is disposed over the first support plate and associated with the pixel region. The TFT structure includes a first metal layer over the first support plate. The first metal layer includes a gate. A silicon layer is disposed over the gate. A second metal layer is disposed over the silicon layer. The second metal layer includes a source and a drain covering a first portion of the silicon layer. A light-absorbing material layer is disposed over at least a second portion of the silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.