Method for manufacturing group-III nitride substrate and group-III nitride substrate
US10290489B2 · kind B2 · utility
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Inventors
Key dates
| Filing date | Oct 20, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Oct 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
There is provided a method for manufacturing a group-III nitride substrate, including: (a) preparing a substrate which is made of a group III-nitride crystal and which has a high oxygen concentration domain where an oxygen concentration is higher than that of a matrix of the crystal; (b) irradiating the substrate with laser beam aiming at the high oxygen concentration domain, forming a through-hole penetrating the substrate in a thickness direction, and removing at least a part of the high oxygen concentration domain from the substrate; and (c) embedding at least a part of an inside of the through-hole by growing the group-III nitride crystal in the through-hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.