Method of manufacturing semiconductor device by using plasma etching apparatus
US10290527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2018 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Mar 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive concept provides a method of manufacturing a semiconductor device using a plasma etching apparatus including an alignment chamber and a process chamber. The method includes: loading a wafer in the alignment chamber of the plasma etching apparatus; rotating the wafer loaded in the alignment chamber according to a plurality of heating zones arranged in an electrostatic chuck of the process chamber, thereby rotating a reference point of the wafer; transferring the wafer that was rotated in the alignment chamber onto the electrostatic chuck of the process chamber; and plasma-etching the wafer that was rotated in the alignment chamber on the electrostatic chuck of the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.