Semiconductor device and manufacturing method of the same
US10290609B2 · kind B2 · utility
4Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Aug 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes: a bottom package; wherein an area of a contact surface between the conductor and the through via substantially equals a cross-sectional area of the through via, and the bottom package includes: a molding compound; a through via penetrating through the molding compound; a die molded in the molding compound; and a conductor on the through via. An associated method of manufacturing the semiconductor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.