Thin film transistor and method of fabricating the same, array substrate and display apparatus
US10290661B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 15, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Aug 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A method of fabricating a TFT includes a step of forming a gate electrode, a gate insulation layer, an active layer, a source electrode, a drain electrode, a passivation layer and a connection electrode, wherein a pattern including the gate electrode, the source electrode and the drain electrode, the active layer and the gale insulation layer is formed by one patterning process, a pattern including the passivation layer and a via hole through the passivation layer is formed by one patterning process, and a pattern of the connection electrode is formed by one patterning process to electrically connect the source electrode and the drain electrode with the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.