Thin film transistor (TFT) array substrates and manufacturing methods thereof

US10290666B2 · kind B2 · utility

Assignee

• Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. · CN

Inventors

• Mian Zeng · Beijing, CN
• Xiaodi Liu · Beijing, CN

Key dates

• Filing date: May 27, 2017
• Grant date: May 14, 2019
• Expiry date: Jun 9, 2037

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F2201/123
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to a thin film transistor (TFT) array substrate and a manufacturing method thereof. The manufacturing method includes adopting a shading metal layer to form the bottom gate electrode, depositing a buffer layer on the substrate having the bottom gate electrode, applying a patterned process on the buffer layer to reduce the thickness of the buffer layer on the bottom gate electrode, applying the patterned process on the semiconductor layer to form the semiconductor pattern corresponding to the bottom gate electrode within the thin area of the buffer layer. The present disclosure may reduce a thickness of the buffer layer corresponding to the bottom gate electrode, so as to improve the whole performance of the array substrate caused by the bottom gate electrode.