Semiconductor device having hall elements formed in a semiconductor substrate and a magnetic body flux concentrator
US10290677B2 · kind B2 · utility
2Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Mar 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a portion having an approximate quadrant shape, and a portion contiguous to the approximate quadrant portion and substantially parallel to the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.