Magnetic core inductor semiconductor structure and method
US10290697B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 24, 2018 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Sep 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1206
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.