Semiconductor device and method for manufacturing the same
US10290745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6736
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.