Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component

US10290784B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Korbinian Perzlmaier · Regensburg, DE
• Stefanie Rammelsberger · Zeitlarn, DE
• Anna Kasprzak-Zablocka · Donaustauf, DE
• Julian Ikonomov · Neutraubling, DE
• Christian Leirer · Friedberg, DE

Key dates

• Filing date: May 12, 2016
• Grant date: May 14, 2019
• Expiry date: May 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.