Thin film transistor including recessed gate insulation layer and its manufacturing method, array substrate, and display device

US10290822B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Honhang Fong · Beijing, CN
• Yingtao Xie · Beijing, CN
• Shihong Ouyang · Lo Wu, CN
• Shucheng Cai · Beijing, CN
• Qiang Shi · Suzhou, CN
• Ze Liu · Beijing, CN

Key dates

• Filing date: Nov 7, 2014
• Grant date: May 14, 2019
• Expiry date: Nov 7, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K19/10

Abstract

A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode (3) and a gate insulation layer (2), the gate insulation layer (2) is provided with a recess (4) at a position corresponding to the gate electrode (3). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down.