Patent · US Active

Photodetector

US10290823B2 · kind B2 · utility

0Cited by

1References

16Claims

0Family size

Assignees

OLYMPUS CORPORATION · JP
THE UNIVERSITY OF TOKYO · JP
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION · JP

Inventors

Yoshiharu Ajiki · Kamikawa, JP
Isao Shimoyama · Tokyo, JP
Kiyoshi Matsumoto · Owariasahi, JP
Tetsuo Kan · Tokyo, JP
Koichi Karaki · Tokyo, JP
Yasuo Sasaki · Tokyo, JP
Masayuki Yahiro · Fukuoka, JP
Akiko Hamada · Fukuoka, JP
Chihaya Adachi · Fukuoka, JP

Key dates

Filing date	Nov 9, 2015
Grant date	May 14, 2019
Priority date	—
Expiry date	Nov 9, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Provided is a photodetector including: an organic semiconductor (20) having protrusions; a metal layer (30) added onto the organic semiconductor (20), for promoting at least one of localized plasmon resonance and surface plasmon resonance in which electrons are excited through irradiation of detection light; and a semiconductor (40) forming a junction with the metal layer (30), for allowing electrons excited through the plasmon resonance to pass through the junction (40a) with the metal layer (30).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.