Control device for a power semiconductor switch
US10291221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2018 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/0009
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.