Methods of planarization for device fabrication with head features background
US10297279B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2018 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Apr 10, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/048
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods of planarizing materials, such as where surface topographies are created as part of a thin film device fabrication process are described. These methods find particular application in the creation of nano-sized devices, where surface topographical features can be effectively planarized without adversely creating other surface topographies and/or causing deleterious effects a material junctions. Methods include the step of depositing a sacrificial layer overlying at least a portion of a first material layer and at least a portion of a backfilled second material at a junction between the first and second materials. The sacrificial layer substantially retains the surface topography of the microelectronic device. Chemical-mechanical planarization is performed on a surface of the sacrificial layer but leaving a remainder portion of the thickness of the sacrificial layer. Then, physical or dry chemical process is conducted for removing the remainder of the sacrificial layer and at least a portion of at least one of the first and second materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.