Method for manufacturing thin film transistor, method for manufacturing array substrate, array substrate and display device
US10297449B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 9, 2016 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | May 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing thin film transistor, a method for manufacturing array substrate, an array substrate and a display device are provided. The method for manufacturing thin film transistor includes forming an intermediate layer on a substrate, patterning the intermediate layer to form an intermediate layer reserved region and an intermediate layer unreserved region, where the intermediate layer unreserved region corresponds to a pattern of a first structure layer, forming, on the substrate with a pattern of the intermediate layer, a material layer from which the first structure layer is formed, and removing the intermediate layer, and forming the pattern of the first structure layer through a portion of the material layer remaining on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.