Selective metal/metal oxide etch process
US10297465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2015 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Oct 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a process for selectively etching molybdenum or titanium relative to a oxide semiconductor film, including providing a substrate comprising a layer of oxide semiconductor and a layer comprising molybdenum or titanium on the layer of oxide semiconductor; preparing the substrate by applying a photoresist layer over the layer comprising molybdenum or titanium, and then patterning and developing the photoresist layer to form an exposed portion of the layer comprising molybdenum or titanium; providing a composition comprising ammonia or ammonium hydroxide, a quaternary ammonium hydroxide and a peroxide; and applying the composition to the exposed portion for a time sufficient to etch and remove the exposed portion of the layer comprising molybdenum or titanium, wherein the etching selectively removes the molybdenum or titanium relative to the oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.