Semiconductor device and method for manufacturing the semiconductor device
US10297557B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jun 30, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.