Quantum dot integration schemes
US10297581B2 · kind B2 · utility
6Cited by
1References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2016 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.