Semiconductor device
US10297593B2 · kind B2 · utility
4Cited by
1References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 26, 2016 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Dec 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
According to one embodiment, a semiconductor device includes a first region having an insulated gate bipolar transistor and a second region having a diode. The first region and the second region are formed in a same chip. A breakdown voltage of the second region is lower than a breakdown voltage of the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.