High voltage resistor device
US10297661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Sep 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a high voltage resistor device that is able to receive high voltages using a small footprint, and an associated method of fabrication. In some embodiments, the high voltage resistor device has a substrate including a first region with a first doping type, and a drift region arranged within the substrate over the first region and having a second doping type. A body region having the first doping type laterally contacts the drift region. A drain region having the second doping type is arranged within the drift region, and an isolation structure is over the substrate between the drain region and the body region. A resistor structure is over the isolation structure and has a high-voltage terminal coupled to the drain region and a low-voltage terminal coupled to a gate structure over the isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.