Light emitting device

US10297723B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Chao-Hsing Chen · Tainan, TW
• Jia-Kuen Wang · Hsinchu, TW
• Tzu-Yao Tseng · Hsinchu, TW
• Bo-Jiun Hu · Beijing, CN
• Tsung-Hsun Chiang · Hsinchu, TW
• Wen-Hung Chuang · Hsinchu, TW
• Kuan-Yi Lee · Taipei, TW
• Yu-Ling Lin · Hsinchu, TW
• Chien-Fu Shen · Hsinchu, TW
• Tsun-Kai Ko · Tainan, TW

Key dates

• Filing date: Apr 9, 2018
• Grant date: May 21, 2019
• Expiry date: Apr 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.