Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip

US10297736B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Anhe HE · Xiamen, CN
• Suhui Lin · Xiamen, CN
• Jiansen ZHENG · Xiamen, CN
• Kangwei Peng · Xiamen, CN
• Xiaoxiong LIN · Xiamen, CN
• Chenke HSU · Xiamen, CN

Key dates

• Filing date: Dec 24, 2017
• Grant date: May 21, 2019
• Expiry date: Dec 24, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/032
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.