Dual emission layer solid state infrared emitter apparatus and method of use thereof
US10299344B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 21, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Aug 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B44/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention comprises an infrared source and method of use thereof comprising the steps of: (1) providing a solid state source comprising: an electrically conductive zinc oxide film having a thickness of less than five micrometers and a film of metal oxide particles, the metal oxide particles comprising a mean diameter of less than ten micrometers; (2) passing an alternating, pulsed current through the zinc oxide film, the pulsed current heating the zinc oxide film to greater than 700° C. in less than twenty milliseconds using less than one Watt, which results in a first infrared emission from the zinc oxide film; and (3) heating the film of metal oxide particles, using thermal conduction from the zinc oxide film, to at least 700° C., resultant in a second infrared emission from the film of oxide particles, where the first and second infrared emissions exit the source through an emission side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.