RF MEMS electrodes with limited grain growth
US10301173B2 · kind B2 · utility
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3References
16Claims
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Assignee
Inventor
Key dates
| Filing date | Aug 27, 2014 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Aug 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2001/0084
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.