Liquid composition for cleaning semiconductor device, method for cleaning semiconductor device, and method for fabricating semiconductor device
US10301581B2 · kind B2 · utility
1Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Oct 4, 2016 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Jan 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Liquid cleaning compositions for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device, which comprise hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphonic acid at 0.0001-0.05% by mass, a compound having a group 13 element at 0.00005-0.5% by mass, and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.