Integrated circuit with sensing transistor array, sensing apparatus and measuring method
US10302590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2013 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Nov 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4145
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.