Method for indicating program state of wordline in NAND flash memory
US10304537B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 8, 2018 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Jan 8, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present application provides a NAND flash memory and a method for indicating program status of wordline in a NAND flash memory, the NAND flash memory comprises: a wordline including a plurality of columns, the columns include NOP columns, which are used to store NOP bytes, one of the NOP bytes is programmed after the wordline is programmed for one time. The method includes: performing program operation to a wordline; and after the wordline is programmed for one time, programming one of NOP bytes; if all the NOP bytes are programmed, outputting a NOP status. The present application could effectively prevent the error occurs due to over-time programming the same wordline.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.