Method for fabricating InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD)

US10304678B1 · kind B1 · utility

Assignee

• INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN · TW

Inventors

• Wen-Hsiang Huang · Baoshan, TW
• Chih-Hung Wu · Taoyuan, TW
• Hwen-Fen Hong · Taoyuan, TW

Key dates

• Filing date: Mar 19, 2018
• Grant date: May 28, 2019
• Expiry date: Mar 19, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides a method for fabricating an InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD). The method comprises: placing a silicon substrate in a reaction chamber; arranging the reaction chamber to have a first chamber temperature, and growing a first GaP layer with a first thickness on the Si substrate at the first chamber temperature; arranging the reaction chamber to have a second chamber temperature, and growing a second GaP layer with a second thickness on the first GaP layer at the second chamber temperature; arranging the reaction chamber to have a third chamber temperature for a first time interval, and then arranging the reaction chamber to have a fourth chamber temperature for a second time interval; and growing a multi-layered InGaP layer on the second GaP layer.