Process to form SOI substrate
US10304723B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2018 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Apr 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure, in some embodiments, relates to a method of forming an SOI substrate. The method may be performed by epitaxially forming a silicon-germanium (SiGe) layer over a sacrificial substrate and epitaxially forming a first active layer on the SiGe layer. The first active layer has a composition different than the SiGe layer. The sacrificial substrate and is flipped and the first active layer is bonded to an upper surface of a dielectric layer formed over a first substrate. The sacrificial substrate and the SiGe layer are removed and the first active layer is etched to define outermost sidewalls and to expose an outside edge of an upper surface of the dielectric layer. A contiguous active layer is formed by epitaxially forming a second active layer on the first active layer. The first active layer and the second active layer have a substantially same composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.